At the 2016 Symposia on VLSI Technology & Circuits, imec presented gate-all-around (GAA) n- and p-MOSFET devices made of vertically stacked horizontal silicon (Si) nanowires (NWs) with a diameter of only 8-nm. The devices, which were fabricated on bulk Si substrates using an industry-relevant replacement metal gate (RMG) process, have excellent short-channel characteristics (SS = 65 mV/dec, DIBL = 42 mV/V for LG = 24 nm) at performance levels comparable to finFET reference devices.   GAA d...